2n/sst5460 series vishay siliconix document number: 70262 s-04030?rev. d, 04-jun-01 www.vishay.com 9-1 p-channel jfets 2n5460 sst5460 2n5461 sst5461 2n5462 sst5462
part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i dss min (ma) 2n/sst5460 0.75 to 6 40 1 ?1 2n/sst5461 1 to 7.5 40 1.5 ?2 2n/sst5462 1.8 to 9 40 2 ?4
high input impedance very low noise high gain: a v = 80 @ 20 a low capacitance: 1.2 pf typical low signal loss/system error high system sensitivity high-quality low-level signal amplification low-current, low-voltage amplifiers high-side switching ultrahigh input impedance pre-amplifiers the 2n/sst5460 series are p-channel jfets designed to provide all-around performance in a wide range of amplifier and analog switch applications. the 2n series, to-226aa (to-92), and sst series, to-236 (sot-23), plastic packages provide low cost options, and are available in tape-and-reel for automated assembly, (see packaging information). to-226aa (to-92) top view s g d 1 2 3 d s g to-236 (sot-23) 2 3 1 sst5460 (b0)* sst5461 (b1)* sst5462 (b2)* *marking code for to-236 top view 2n5460 2n5461 2n5462
gate-drain voltage 40 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate-source voltage 40 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current ?10 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature ?65 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c
2n/sst5460 series vishay siliconix www.vishay.com 9-2 document number: 70262 s-04030 ? rev. d, 04-jun-01
limits 2n/sst5460 2n/sst5461 2n/sst5462 parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = 10 a , v ds = 0 v 55 40 40 40 v gate-source cutoff voltage v gs(off) v ds = ? 15 v, i d = ? 1 a 0.75 6 1 7.5 1.8 9 v saturation drain current b i dss v ds = ? 15 v, v gs = 0 v ? 1 ? 5 ? 2 ? 9 ? 4 ? 16 ma v gs = 20 v, v ds = 0 v 0.003 5 5 5 na gate reverse current i gss t a = 100 c 0.0003 1 1 1 a gate operating current i g v dg = ? 20 v, i d = ? 0.1 ma 3 drain cutoff current i d(off) v ds = ? 15 v, v gs = 10 v ? 5 pa i d = ? 0.1 ma 1.3 0.5 4 gate-source voltage v gs v ds = ? 15 v i d = ? 0.2 ma 2.3 0.8 4.5 i d = ? 0.4 ma 3.8 1.5 6 v gate-source forward voltage v gs(f) i g = ? 1 ma , v ds = 0 v ? 0.7 dynamic common-source forward transconductance g fs v ds = ? 15 v, v gs = 0 v 1 4 1.5 5 2 6 ms common-source output conductance g os v ds = ? 15 v, v gs = 0 v f = 1 khz 75 75 75 s common-source 2n 4.5 7 7 7 reverse transfer capacitance c iss sst 4.5 common-source reverse transfer capacitance c rss v ds = ? 15 v, v gs = 0 v f = 1 mhz 1.2 pf common-source 2n 1.5 2 2 2 common-source output capacitance c oss sst 1.5 equivalent input v ds = ? 15 v, v gs = 0 v 2n 15 115 115 115 nv ? equivalent input noise voltage e n v ds = ? 15 v, v gs = 0 v f = 100 hz sst 15 nv ? hz v ds = ? 15 v, v gs = 0 v 2n 0.2 2.5 2.5 2.5 noise figure nf f = 100 hz, r g = 1 m bw = 1 hz sst 0.2 db notes a. typical values are for design aid only, not guaranteed nor subject to production testing. pscib b. pulse test: pw 300 s duty cycle 2%.
2n/sst5460 series vishay siliconix document number: 70262 s-04030 ? rev. d, 04-jun-01 www.vishay.com 9-3 ? 20 0246 810 ? 16 ? 12 ? 8 ? 4 0 drain current and transconductance vs. gate-source cutoff voltage v gs(off) ? gate-source cutoff voltage (v) g fs @ v ds = ? 15 v, v gs = 0 v i dss @ v ds = ? 15 v, v gs = 0 v f = 1 khz g fs i dss 5 0 2.5 1000 0246 810 800 600 400 200 0 on-resistance and output conductance vs. gate-source cutoff voltage v gs(off) ? gate-source cutoff voltage (v) r ds @ i d = ? 100 ma, v gs = 0 v g os @ v ds = ? 15 v, v gs = 0 v f = 1 khz r ds g os 100 80 60 40 20 0 ? 2 0 ? 4 ? 8 ? 12 ? 16 ? 20 ? 1.6 ? 1.2 ? 0.8 ? 0.4 0 output characteristics v ds ? drain-source voltage (v) ? drain current (ma) i d 0.2 v 0.4 v 0.6 v 0.8 v 1.0 v v gs = 0 v v gs(off) = 1.5 v ? 0.5 0 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1 ? 0.4 ? 0.3 ? 0.2 ? 0.1 0 output characteristics v ds ? drain-source voltage (v) ? drain current (ma) i d 0.4 v 0.6 v 0.8 v 1.0 v 1.2 v v gs = 0 v ? 10 0 ? 4 ? 8 ? 12 ? 16 ? 20 ? 8 ? 6 ? 4 ? 2 0 output characteristics v ds ? drain-source voltage (v) ? drain current (ma) i d v gs = 0 v 0.5 v 2.0 v 1.0 v 1.5 v v gs(off) = 3 v ? 2 0 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1 ? 1.6 ? 1.2 ? 0.8 ? 0.4 0 output characteristics v ds ? drain-source voltage (v) ? drain current (ma) i d v gs = 0 v 0.5 v 2.0 v 2.5 v 1.0 v 1.5 v v gs(off) = 3 v v gs(off) = 1.5 v 0.2 v s) g os ? output conductance ( i dss ? saturation drain current (ma) g fs ? forward transconductance (ms) r ds(on) ? drain-source on-resistance ( ? )
2n/sst5460 series vishay siliconix www.vishay.com 9-4 document number: 70262 s-04030 ? rev. d, 04-jun-01 ? 5 0 0.4 0.8 1.2 1.6 2 ? 4 ? 3 ? 2 ? 1 0 transfer characteristics t a = ? 55 c 125 c ? drain current (ma) i d v gs ? gate-source voltage (v) 25 c ? 10 0123 45 ? 8 ? 6 ? 4 ? 2 0 transfer characteristics v gs ? gate-source voltage (v) t a = ? 55 c 125 c ? drain current (ma) i d 25 c ? 0.1 ? 1 ? 10 1000 800 0 600 400 200 on-resistance vs. drain current i d ? drain current (ma) t a = 25 c v gs(off) = 1.5 v 3 v 4 v 10 na 1 na 0.1 pa 0 ? 30 ? 40 ? 20 ? 10 ? 50 100 pa 10 p a 1 pa gate leakage current v dg ? drain-gate voltage (v) ? gate leakage i g i gss @ 125 c i gss @ 25 c t a = 125 c t a = 25 c ? 5 ma ? 5 ma 5 0 0.4 0.8 1.2 1.6 2 4 3 2 1 0 transconductance vs. gate-source voltage t a = ? 55 c 25 c 125 c v gs ? gate-source voltage (v) 5 0123 45 4 3 2 1 0 transconductance vs. gate-source voltage t a = ? 55 c 25 c 125 c v gs ? gate-source voltage (v) v gs(off) = 1.5 v v ds = ? 15 v v gs(off) = 3 v v ds = ? 15 v v gs(off) = 1.5 v v ds = ? 15 v f = 1 khz v gs(off) = 3 v v ds = ? 15 v f = 1 khz ? 1 ma ? 0.1 ma r ds(on) ? drain-source on-resistance ( ? ) g fs ? forward transconductance (ms) g fs ? forward transconductance (ms)
2n/sst5460 series vishay siliconix document number: 70262 s-04030 ? rev. d, 04-jun-01 www.vishay.com 9-5 ? 0.01 ? 0.1 ? 1 100 80 0 60 40 20 a v ? voltage gain i d ? drain current (ma) assume v dd = ? 15 v, v ds = ? 5 v v gs(off) = 1.5 v circuit voltage gain vs. drain current 10 0 4 8 12 16 20 8 6 4 2 0 5 0 4 8 12 16 20 0 v gs ? gate-source voltage (v) common-source input capacitance vs. gate-source voltage ? input capacitance (pf) c iss ? 5 v ? 15 v f = 1 mhz common-source reverse feedback capacitance vs. gate-source voltage ? reverse feedback capacitance (pf) c rss v gs ? gate-source voltage (v) ? 5 v ? 15 v f = 1 mhz 2.5 ? 0.1 ? 1 ? 10 10 1 0.1 common-source forward transconductance vs. drain current i d ? drain current (ma) t a = ? 55 c 125 c 10 100 1 k 100 k 10 k 100 10 1 ? 0.1 ? 1 ? 10 20 16 0 12 8 4 output conductance vs. drain current i d ? drain current (ma) t a = ? 55 c 125 c equivalent input noise voltage vs. frequency f ? frequency (hz) v ds = ? 15 v i d = ? 0.1 ma i d = ? 1 ma 25 c v ds = ? 15 v f = 1 khz v gs(off) = 3 v v ds = ? 15 v f = 1 khz v gs(off) = 3 v v gs(off) = 3 v 25 c a v g fs r l 1 r l g os r l 10 v i d g fs ? forward transconductance ( s) e n ? noise voltage nv / hz g os ? output conductance ( s)
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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